NTB5412N, NTP5412N
Power MOSFET
60 Amps, 60 Volts
N-Channel D 2 PAK, TO-220
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? These are Pb ? Free Devices
Applications
? LED Lighting and LED Backlight Drivers
? DC ? DC Converters
? DC Motor Drivers
? Power Supplies Secondary Side Synchronous Rectification
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
14 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
60 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
Symbol
V DSS
V GS
V GS
Value
60
$ 20
$ 30
Unit
V
V
V
G
4
S
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
60
44
125
A
W
TO ? 220AB
1
2
3
D 2 PAK
4
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature Range
I DM
T J , T stg
155
? 55 to
175
A
° C
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V dc , V GS = 10 V dc , I L(pk) = 60 A,
L = 0.1 mH, R G = 25 W )
I S
E AS
60
180
A
mJ
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
T L
260
° C
NTP
5412NG
NTB
5412NG
AYWW
1
3
Gate
Source
Parameter Symbol Max Unit
Junction ? to ? Case (Drain) Steady State R q JC 1.2 ° C/W
(Note 1)
R q JA 43.2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
1
Gate
AYWW
2
Drain
3
Source
G
A
Y
WW
2
Drain
= Pb ? Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
November, 2008 ? Rev. 1
1
Publication Order Number:
NTB5412N/D
相关PDF资料
NTB5426NT4G MOSFET N-CH 60V 120A D2PAK
NTB5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
NTB6411ANG MOSFET N-CH 100V 72A D2PAK
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相关代理商/技术参数
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NTB5426NT4G 功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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NTB5605PG 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4G 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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